- #CST MICROWAVE STUDIO REDUCING MESH SIZE DRIVERS#
- #CST MICROWAVE STUDIO REDUCING MESH SIZE DRIVER#
- #CST MICROWAVE STUDIO REDUCING MESH SIZE FULL#
The accompanying figure illustrates the half-bridge switch node behavior of a 48-V-to-1-V buck converter delivering 10 A. What to expect with GaN Switch-node voltage rise time (10-90%) transition to 48 V, 1.7 nsec for this buck converter. These GaN devices typically exhibit a gate oxide capability comparable to that of silicon MOSFETs. Some GaN manufacturers leverage the ultralow on-resistance of GaN technology by building high-voltage enhancement-mode GaN transistors in a cascode arrangement of a low-voltage silicon MOSFET and high-voltage depletion-mode GaN device.
#CST MICROWAVE STUDIO REDUCING MESH SIZE DRIVER#
This 600-V, 12-A device integrates a gate driver with a depletion-mode (normally on) GaN FET that delivers high-frequency, enhancement-mode switch operation from a logic-level input. To help address this need, TI introduced the LMG3410.
#CST MICROWAVE STUDIO REDUCING MESH SIZE DRIVERS#
GaN FETs with a low-voltage gate oxide capability need specialized GaN FET gate drivers like the Texas Instruments LM5113.Īs we will see, the key requirement in advancing high-frequency power is to minimize distributed parasitic coupling. In fact, gate-source voltages exceeding about 6 V can damage some GaN transistors.
![cst microwave studio reducing mesh size cst microwave studio reducing mesh size](https://img.dokumen.tips/img/1200x630/reader016/image/20181129/5ae762197f8b9ae1578ef206.png)
#CST MICROWAVE STUDIO REDUCING MESH SIZE FULL#
It is the ultralow gate charge characteristic of WBG transistors that facilitates high-frequency operation in high-power applications, reducing both power stage and gate driver losses in hard-switch applications.Īlso evident from a gate charge curve is that a full saturation of the vertically-structured, super-junction transistor requires nearly twice the gate potential compared with the laterally-structured GaN device. The rate at which this happens is determined by the driver output current and the device gate charge. The gate driver sources and sinks current into the gate terminal to move up and down the device’s gate charge curve. Until the gate-drain “miller capacitance” of the FET is charged, the device remains in a high on-resistance state. As such, the turn-on and turn-off behavior is largely a function the device’s composite gate charge. MOSFETs built-in silicon and the latest WBG transistors are both FETs. Gate charge of a 650-V enhancement mode GaN transistor (green) and a super junction, silicon MOSFET (orange) of comparable R DSON.
![cst microwave studio reducing mesh size cst microwave studio reducing mesh size](http://image.slidesharecdn.com/cst-trainingcoremodule-antenna-2-140520180247-phpapp02/95/cst-training-core-module-antenna-2-46-638.jpg)
In this regard, 3D electromagnetic (EM) field solvers help isolate and resolve printed circuit board (PCB) and component parasitic coupling that otherwise would compromise the wide bandgap (WBG) transistor advantage. Today power transistors built on wide-bandgap (WBG) semiconductor materials including silicon carbide (SiC) and gallium nitride (GaN) are being used to realize higher power efficiency and higher power density at a lower cost.
![cst microwave studio reducing mesh size cst microwave studio reducing mesh size](https://www.researchgate.net/profile/Mohammad-Rashed-Faruque/publication/269432093/figure/fig1/AS:331147910369281@1455963222634/The-head-and-phone-models-used-in-the-SAR-calculations_Q640.jpg)
More recently, however, these heterojunction transistors have evolved to address a broader scope of high-frequency, high-voltage and high-current power applications. These so-called heterojunction, field effect transistors (FETs) were originally developed for high-frequency RF power amplifiers. HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) were first introduced in the early 1980s and are touted for their exceptional switching qualities. Here’s how a 3D EM simulation can be used to accurately gauge gate-driver trace inductance.